SUNNYVALE, Calif. & KYOTO, Japan--(BUSINESS WIRE)--June 11, 2003--At the VLSI Symposium in Kyoto, Japan, AMD (NYSE:AMD - News) researchers presented detailed information on their creation of transistors delivering some of the highest performance levels ever published. Faster transistors are key enablers of higher-performance customer solutions, acting as the fundamental building blocks of future microprocessor designs.
One set of transistors presented today use fully-depleted Silicon-on-Insulator (FDSOI) technology and deliver the highest PMOS (P-channel metal-oxide semiconductor) transistor speed ever published: up to a 30% increase versus previously published transistors. The other set use Strained-Silicon and AMD metal gate technology to deliver 20-25% higher NMOS (N-channel metal-oxide semiconductor) performance relative to conventional Strained-Silicon transistors.
"Metal-gates, FDSOI and Strained-Silicon are examples of key transistor R&D work conducted by AMD. The double-digit percent improvements achieved in our labs expands AMD's options for achieving our aggressive performance objectives when we transition to 65 nanometer (nm) production and beyond," said Craig Sander, vice president of process technology development for AMD.
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