We usually think of at 6pS/mm, but in any case that’s not much of a factor. At the scales in a microprocessor, time of flight is an issue only for a small percentage of the wires. What dominates is the time it takes to make a transition. In other words. Each wire has an effective capacitance, and you put a ramp on one side and need to see the ramp on the other. The time delay between the ramps is the time of flight. But even at the input, the ramp is not instantaneous. The transitor drain wants to charge the capacitor but can’t do so instantaneously. We usually worry about the time it takes to get from 20 percent of Vdd to 80 percent.
Smaller geometries can actually HURT this, because we decrease the space between the wires without making a proportional decrease in the height of the wires. Capacitance is proportional to the cross sectional area between the wires (which decreases when we shrink the height of the wires) divided by the distance between the wires. By shrinking the length of the wires we also decrease the capacitance because that decreases the cross sectional area. (I am ignoring resistance to make this simple). The net effect is that interconnect capacitance scales worse than the transistor size in the real world. Because of this we can’t scale transistor width at the same rate we are scaling transistor length. You need more width to length to increase the drive strength. But since there is a transistor at the far end of your wire, this adds more capacitance (a transistor source looks like a mos capacitor). Which means you need to beef up the driver a tad more. And the cycle repeats until you find the ideal transistor size.
If you make your wires very thin, you increase resistance, which has the effect of allowing the ramp to increase faster at the source end, but then you get time of flight being more of a problem. You also increase the risk of parasitic cross coupling, which is incredibly hard to model and predict (and makes it very hard to bin parts). One way to deal with that is to use special wiring schemes like differential wiring, one 1 of N wiring. The latter was intrinsity’s specialty, which may mean Apple is doing it, but it has its own trade offs.
In any event, this is why transistor sizes do not actually shrink anywhere near as fast as the fab node sizes. There are probably zero transistors in a 7nm design that have channels that are 7nm wide and 7nm long. Also probably very few wires that are actually 7nm wide or 7nm spaced.