There is really not much of a difference between a 16nm or 14nm FINFET device. Back in the day, the process node would describe the smallest possible feature size on a transistor. So say in an 130nm process the minimum transistor length you could have was 130nm but in 90nm you could get the same performance out of a device that had a 90nm length (I am ignoring width, which is just as important for device performance). This meant as you went from node to to node you could have a shrink in your devices. yay right? In practice, that shrink only applies to your digital logic. However your analog logic does not benefit as much from this shrink for many practical reasons of circuit design. So while your total area could shrink by 70%, it really depends on the ratio of analog and digital circuitry in your design. Not as straight forwards as you might think.
Now let's fast forward to these sub 20nm, such was 16 and 14 finfet. Everything is out the window. The industry is trying to keep up with Moore's law, and more for marketing and self fulfilling promises do we have these nodes. In actuality, they are really all similar and do not provide much shrink benefit from a 20nm node. Long story short, there really shouldn't be much difference in either chip.
Also, keep in mind Apple designed these chips in each process. Apple had a specs defined for each chip, did the circuit design, did the layout design, and did all the work. All TSMC or Samsung did was take their design and run it through the fab.