Agreed.neutrino23 said:You are right, up to a point. As dimensions became smaller the chips became more efficient, they used fewer electrons to store one bit or to change that bit's logic state. However, at around the 90nm level a new effect started to gain importance. For various reasons it became more difficult to isolate the various signals in the chip. What should be perfect insulators were now leaky insulators. Current flowing through a resistor generates heat. Any imperfection in the way materials are formed is magnified into a current leak.
Fantastic levels of genius and technology are being applied to this basket of problems. If they can come up with a break through to solve this leakage problem we'll see some spectacular products.
Gate leakage current (Ioff) is another significant factor (probably the most significant) for the 4x increase in dissipation power per generation. As transistors scale (i.e. de-magnify) from 180 to 90 to 65 to 45 to 30, both the gate length (Lg) and oxide thickness (Tox) drop. A shorter gate length allows a transistor to switch more quickly, but at 45nm, gate oxides are only about 5 atom widths deep. This oxide is designed to prevent current leakage from the active region back into the poly gate when the gate is turned off, but electrons jump the gate and induce a leakage current due to both (1) relatively poor dielectric property of the gate oxide and (2) narrow oxide depth. If the oxide depth is increased, more active or drive current is needed to switch on the gate, but the gate oxide will deliver better insulative properties. The ideal solution is to keep the gate oxide as thin as possible, but use or develop an oxide with a higher dielectric constant (high-k).